Korobko, Roman, Dr.

Education

Ph.D. in Chemistry, Department of Materials and Interfaces, the Faculty of Chemistry, Weizmann Institute of Science, Israel, 2014.
Control of elastic properties of ceramics by external electric field
M.Sc. in Chemistry, Department of Materials and Interfaces, the Faculty of Chemistry, Weizmann Institute of Science, Israel, 2009.
Permanent Electrical Contacts to Organic Molecular Monolayers for Metal-Molecules-Semiconductor Junctions
B.A. in Chemistry, B.Sc. in Materials Engineering, the Faculty of Materials Engineering
Technion - Israel Institute of Technology, Israel, 2003.

Publications

• Lazovski, G.; Kraynis, O.; Korobko, R.; Wachtel, E.; Lubomirsky, I.
  Optical investigation of oxygen diffusion in thin films of Gd-doped ceria
  Solid State Ionics, 277, 30 (2015)
• Korobko, R.; Lerner, A.; Li, Y.; Wachtel, E.; Frenkel, A.I.; Lubomirsky, I.
  In-situ extended X-ray absorption fine structure study of electrostriction in Gd doped ceria
  Applied Physics Letters, 106, 4, 042904 (2015)
• Korobko, R.; Kim S. K.; Kim, S.; Cohen, S. R.; Wachtel, E.; Lubomirsky, I.
  The role of point defects in the mechanical behavior of doped ceria probed by nanoindentation
  Advanced Functional Materials, 23, 48, 6076 (2013)
• Korobko, R.; Wachtel, E.; Lubomirsky, I.
  Cantilever Resonator Based on the Electrostriction Effect in Gd-Doped Ceria
  Sensor Actuat. A-Phys, 201, 73 (2013)
• Kossoy, A.; Wang, Q.; Korobko, R.; Grover, V.; Feldman, Y.; Wachtel, E.; Tyagi, A. K.; Frenkel, A. I.; Lubomirsky, I.
  Evolution of the local structure at the phase transition in CeO₂-Gd₂O₃ solid solutions”, Phys. Rev. B 2013, 87, 054101.
  Phys. Rev. B, 87, 054101. (2013)
• Korobko, R.; Patlolla, A.; Kossoy, A.; Wachtel, E.; Tuller, H.L.; Frenkel, A.I.; Lubomirsky, I.
  Giant Electrostriction in Gd-Doped Ceria
  Advanced Materials, 24, 43, 6076 (2012)
• Korobko, R.; Chen, C.-T.; Kim, S.; Cohen, S.R.; Wachtel, E.; Yavo, N.; Lubomirsky, I.
  Influence of Gd content on the room temperature mechanical properties of Gd-doped ceria
  Scripta Materialia, 66, 155 (2012)
• Stein, N.; Korobko, R.; Yaffe, O.; Har-Lavan, R.; Shpaisman, H.; Tirosh, E.; Vilan, A.; Cahen, D.
  Nondestructive Contact Deposition for Molecular Electronics: Si-Alkyl//Au Junctions
  J. Phys. Chem. C, 114, 12769 (2010)
• Shpaisman, H.; Har-Lavan, R.; Stein, N.; Yaffe, O.; Korobko, R.; Seitz, O.; Vilan, A.; Cahen, D.
  Electronic Contact Deposition onto Organic Molecular Monolayers: Can We Detect Metal Penetration?
  Advanced Functional Materials, 20, 13, 2181 (2010)
• Kossoy, A.; Feldman, Y.; Korobko, R.; Wachtel, E.; Lubomirsky, I.; Maier, J.
  Influence of Point-Defect Reaction Kinetics on the Lattice Parameter of Ce_0.8Gd_0.2O_1.9
  Advanced Functional Materials, 19, 4, 634 (2009)

Patents

• Lubomirsky I., Korobko R., Kossoy A., Tuller H.L.
  Electromechanical effect in cerium based oxides
  WO2012046234, 2011.

Fellowships, Awards and Honors

• ACTA Student Award, 2012 Scripta Materialia journal, 2013
• Graduate Student Award, E-MRS 2013 Spring, Strasbourg, France, 2013
• BSF Travel Grant for Young Scientists, 2011
• Poster award, Solid State Ionics 18 conference, Warsaw, Poland, 2011
• Cum Laude, B.A. & B.Sc., Technion – Israel Institute of Technology, 2003

Research

Multiterminal memristive devices – benefits of anisotropy

Main Scientific questions:
• Can 4-terminal devices shed light on memristive mechanisms in different materials, when electroforming is spatially/directionally separated from read terminals?
• Can 4-terminal devices reveal functionalities of memristors: Can one write perpendicular to read? Is it possible to “gate” the memristor?

Methods:

Progress:
A sample after 2 photolithography steps and one PLD:

Engineering a novel resistive switching device-type based on synergy between metal oxides with different functionality

The idea is to combine several metal oxides with different functionality in order to achieve superior synergetic memristive properties. The preliminary results of vanadium oxide/gadolinium-doped ceria bilayers open new opportunities for intelligent design.

Representative voltammogram of GDC/VOx devices with different thickness of the GDC layer.