Schweiger, Sebastian

Education

M.Sc. Technical Chemistry, Technical University Graz, Austria, 2011.
B.Sc. Chemistry, Technical University Graz, Austria, 2008.

Publications

• Schweiger, S.; Pfenninger, R.; Bowman, W.J.; Aschauer, U.; Rupp, J.L.M.
  Designing Strained Interface Heterostructures for Memristive Devices
  Advanced Materials, 1605049 (2017)
• Yang, N.; Shi, Y.; Schweiger, S.; Strelcov, E.; Belianinov, A.; Foglietti, V.; Balestrino, G.; Kalinin, S.V.; Rupp, J.L.M.; Aruta C.
  The role of associated defects in oxygen ion conduction and surface exchange reaction for high structural quality samaria doped ceria thin films as catalytic coatings
  ACS Appl. Mater. Interfaces, 8, 23, 14613–14621 (2016)
• Imtiaz, Q.; Abdala, P.M.; Kierzkowska, A.; van Beek, W.; Schweiger, S.; Rupp, J.L.M.; Müller, C.R.
  Na⁺-doped and Al₂O₃-stabilized CuO Oxygen Carriers for Chemical Looping Combustion and Chemical Looping with Oxygen Uncoupling
  Physical Chemistry Chemical Physics, 18, 17, 12278-12288 (2016)
• Shi, Y.; Bork, A.H.; Schweiger, S.; Rupp, J.L.M.
  The Effect of Mechanical Twisting on Oxygen Ionic Transport in Solid State Energy Conversion Membranes
  Nature Materials, 14, 721 (2015)
• Messerschmitt, F.; Kubicek, M.; Schweiger S.; Rupp, J.L.M.
  Memristor Kinetics and Diffusion Characteristics for Mixed Anionic-Electronic SrTiO_3-δ: The Memristor-based Cottrell Analysis Connecting Material to Device Performance
  Advanced Functional Materials, 24, 47, 7448 (2014)
• Schweiger, S.; Kubicek, M.; Messerschmitt, F.; Murer, C.; Rupp, J.L.M.
  A Micro-Dot Multilayer Oxide Device: Let’s Tune the Strain-Ionic Transport Interaction
  ACS Nano, 8, 5, 5032 (2014)
• Schweiger, S.; Neubauer, C.; Fraser, S.; Klein, T.; Schennach, R.; Reichmann, A.; Gruber-Woelfler, H.
  Coating of glass substrates to prevent alkali ion diffusion into pharmaceutical solutions
  Surface & Coatings Technology, 258, 1249 (2014)

Patents

Rupp, J.L.M.; Schweiger, S.; Messerschmitt, F.
Strained Multilayer Resistive-switching Memory Elements
Patent Application PCT/EP2014/001020: Priority: April 19, 2013 (pending)

Fellowships, Awards and Honors

• Spark Award 2014 "Highly increased performance of memristive devices"
  Award for the most promising invention of 2013 at ETH Zurich
• 2014 Chemistry Travel Award by the Swiss Academy of Science (SCNAT), the Swiss Chemical Society (SCS) and the Swiss Society for Food Chemistry (SSFC)

Research

Sebastian Schweiger is currently working on resistive switching memories, also called Resistive Random Access Memories (ReRAMs). This innovative device is a promising candidate to replace state of the art Flash and DRAM memories in the near future. In resistive switching memories different resistance states can be addressed and used for digital information storage. His major focus is on the improvement of resistive switches through the application of strained oxide multilayers as switching element. Furthermore, the fundamentals behind strained multilayers and electro-chemo-mechanics are investigated and could also be used for other micro-solid state devices.

Microscope view-graphs of strained Gd_0.1Ce_0.9O_2–δ/Er₂O₃ multilayer micro-dots and arrays on chip. a) Top view low magnification light microscopy image of an electrode array contacting through the sides islands of Gd_0.1Ce_0.9O_2–δ/Er₂O₃ multilayer micro-dots on chip. Tungsten needles were used for electrical contacting of the Pt-side contacts. b) High magnification light microscopy image of Pt electrodes contacting a structured multilayer thin film dot (top view). c) Schematic view graphic of a strained multilayer Gd_0.1Ce_0.9O_2–δ/Er₂O₃ heterostructure. The electrodes that are attached to the side walls of the structure allow measuring the conductivity parallel to the strained Gd_0.1Ce_0.9O_2–δ/Er₂O₃ interfaces. d) Side view and tilted 3D view for a micro-dot arranged between two metal electrodes by optical surface profilometry. Here, the scale bar refers to the horizontal width (aspect ratio is not to scale). The color bar indicates the measured heights. e) SEM cross-sectional view of a Gd_0.1Ce_0.9O_2–δ/Er₂O₃ multilayer in a micro-dot. The left side shows a QBSD image and the right side shows a 50% QBSD and 50% In-lens detector image. In the QBSD image the bright contrast phase refers to the Er₂O₃(heavy mass) and the dark one to the Gd_0.1Ce_0.9O_2–δ (light mass).