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ETH Zürich
Phone: +41 44 633 08 65 |
Education
M.Sc. Materials Science and Engineering, ETH Zurich, Switzerland, 2013.
B.Sc. Materials Science and Engineering, ETH Zurich, Switzerland, 2011.
Publications
Awards
Research
Rafael Schmitt is working on redox-based resistive switching for the application in non-volatile memories. This innovative type of Resistive Random Access Memory (ReRAM) is a promising candidate to replace current transistor-based random access memories. The investigated ReRAMs are consisting of binary oxide or perovskite thin films that are deposited using the Pulsed Laser Deposition (PLD) technique. The electrodes are processed in the clean room by means of microfabrication (photolithography).
His main focus is to realize multi-terminal resistive switches for a new type of nonvolatile logic circuits. In a further project, in collaboration with the Multifunctional Ferroic Materials group headed by Prof. Manfred Fiebig, he is investigating the relation between charge and mass transport and the band structure of oxides. Multilayers of different perovskites are epitaxially grown, characterized electrically and additionally analyzed by means of nonlinear laser optics. At a later stage, in-situ measurements combining the transport and spectroscopic measurements will be performed.
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