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Electrochemical Materials
 
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Messerschmitt, Felix

Felix Messerschmitt

ETH Zürich
Felix Messerschmitt
Professorship Electrochemical Materials
HPP P22
Hönggerbergring 64
8093 Zurich
Switzerland

Phone: +41 44 633 04 98
Fax: +41 44 633 12 49
E-Mail: 

Education

M.Sc. Materials Science and Engineering, ETH Zurich, Switzerland, 2011.
B.Sc. Materials Science and Engineering, ETH Zurich, Switzerland, 2008.

Publications

Patents

Rupp, J.L.M.; Schweiger, S.; Messerschmitt, F.
Strained Multilayer Resistive-switching Memory Elements
Patent Application PCT/EP2014/001020: Priority: April 19, 2013 (pending)

Fellowships, Awards and Honors

Research

Felix Messerschmitt is currently working on resistive switching memories, also called Resistive Random Access Memories (ReRAMs). These non-volatile memory technology is a promising candidate to replace current transistor-based random access memories. The focus of this project focuses on a better understanding of the switching kinetics and mechanistics in perovskites (ABO3). Therefore the resistive switching of SrTixFeY1-xO3-δ as a model material system is investigated which allows to alter the band gap, carrier concentration and mobility to a broad extent.

ReRAM chips
ReRAM chips
ReRAM chips
ReRAM chips
 

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